 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712A (Z) 2nd. Edition Dec. 1998 Application UHF / VHF RF amplifier Features * Low noise figure. NF = 1.0 dB typ. at f = 200 MHz * Capable of low voltage operation * Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline 3SK322 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 8 8 25 150 150 -55 to +150 Unit V V V mA mW C C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2 3SK322 Electrical Characteristics (Ta = 25C) Item Symbol Min 12 8 8 -- -- 0.5 0 0 16 2.4 0.8 -- 22 -- 12 -- -- Typ -- -- -- -- -- -- -- -- 20 2.9 1.0 0.023 25 1.0 15 3.2 2.8 Max -- -- -- 100 100 10 +1.0 +1.0 -- 3.4 1.4 0.04 -- 1.8 -- 4.5 3.5 Unit V V V nA nA mA V V mS pF pF pF dB dB dB dB dB VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 60 MHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 900 MHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 200 MHz Test conditions I D = 200 A , VG1S = -3 V, VG2S = -3 V I G1 = 10 A, VG2S = VDS = 0 I G2 = 10 A, VG1S = VDS = 0 VG1S = 6 V, VG2S = VDS = 0 VG2S = 6 V, VG1S = VDS = 0 VDS = 6 V, VG1S = 0.75V, VG2S = 3 V VDS = 10 V, VG2S = 3V, I D = 100 A VDS = 10 V, VG1S = 3V, I D = 100 A VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 MHz Drain to source breakdown voltage V(BR)DSX Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Gate 1 to source cutoff voltage Gate 2 to source cutoff voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure Noise figure Note: Marking is "ZW-" V(BR)G1SS V(BR) G2SS I G1SS I G2SS I DS(on) VG1S(off) VG2S(off) |yfs| Ciss Coss Crss PG NF PG NF NF 3 3SK322 Main Characteristics 4 3SK322 5 3SK322 6 3SK322 7 3SK322 8 3SK322 9 3SK322 10 3SK322 S Parameter (VDS = 6 V, VG2S = 3 V, ID = 10 mA, ZO = 50 ) Freq. (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 MAG. 0.994 0.993 0.986 0.980 0.973 0.950 0.936 0.924 0.912 0.893 0.874 0.859 0.846 0.829 0.810 0.802 0.791 0.778 0.756 0.751 ANG. -5.8 -11.0 -16.8 -22.5 -27.8 -33.0 -38.3 -43.4 -48.0 -52.5 -57.3 -62.0 -66.1 -69.8 -74.2 -78.0 -81.6 -84.6 -88.5 -92.2 S21 MAG. 2.04 2.02 2.00 1.98 1.94 1.90 1.86 1.83 1.77 1.71 1.67 1.64 1.58 1.50 1.46 1.44 1.38 1.34 1.30 1.26 ANG. 173.6 167.4 161.5 155.5 149.6 142.6 137.1 131.6 126.8 121.0 115.5 111.1 106.7 102.1 97.1 92.7 88.9 84.2 80.2 75.9 S12 MAG. 0.00116 0.00132 0.00229 0.00313 0.00427 0.00473 0.00536 0.00561 0.00562 0.00640 0.00638 0.00647 0.00667 0.00694 0.00661 0.00618 0.00622 0.00615 0.00576 0.00562 ANG. 76.9 85.7 78.2 73.5 68.7 63.9 64.3 64.5 60.9 53.5 49.3 49.0 50.2 49.3 46.6 43.7 44.7 43.6 45.1 40.7 S22 MAG. 0.993 0.993 0.991 0.990 0.987 0.985 0.982 0.979 0.975 0.971 0.967 0.964 0.960 0.955 0.952 0.948 0.944 0.940 0.935 0.932 ANG. -2.2 -4.5 -6.4 -8.5 -10.5 -12.5 -14.4 -16.2 -18.2 -20.2 -22.0 -23.9 -25.8 -27.6 -29.4 -31.2 -33.2 -35.1 -36.8 -38.5 11 3SK322 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. 12 |
Price & Availability of 3SK322
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |